专利摘要:
An image sensor pixel comprises a substrate, a photoelectric conversion unit supported by said substrate, a light guide coupled to said photoelectric conversion unit, and antireflection means to reduce reflection between said light guide and said photoelectric conversion unit. One method for manufacturing an image sensor pixel comprises forming an antireflection stack in a photoelectric conversion unit held by a substrate, and forming a light guide adjacent to the photoelectric conversion unit. A method for forming a part of an image sensor pixel comprises forming a first antireflection film on a substrate holding a photoelectric conversion unit, and an insulator on said first antireflection film, etching an opening in the insulation by an etching agent which records the insulation faster than the first antireflection film, forms a second antireflection film inside the opening, and forms light guide material within the aperture. (Machine-translation by Google Translate, not legally binding)
公开号:ES2545429A2
申请号:ES201430928
申请日:2008-12-22
公开日:2015-09-10
发明作者:Hiok Nam Tay
申请人:Candela Microsystems Inc C O Candela Microsystems S Pte Ltd;Candela Microsystems Inc C/o Candela Microsystems (s) Pteltd;
IPC主号:
专利说明:

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权利要求:
Claims (1)
[1]
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